- Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation | Scientific Reports Nature.com
- Exploring pressure-gated band-edge states of 2D halide perovskites Phys.org
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Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation | Scientific Reports – Nature.com
ByGoogle News
Nov 5, 2022